INVESTIGATION OF SHORT CHANNEL EFFECT ON VERTICAL STRUCTURES IN NANOSCALE MOSFET
Abstract: The recent
development of MOSFET demands innovative approach to maintain the scaling into
nanoscale dimension. This paper focuses on the physical nature of vertical
MOSFET in nanoscale regime. Vertical structure is one of the promising devices
in further scaling, with relaxed-lithography feature in the manufacture. The
comparison of vertical and lateral MOSFET performance for nanoscale channel
length (Lch) is demonstrated with the help of numerical tools. The evaluation
of short channel effect (SCE) parameters, i.e. threshold voltage roll-off,
subthreshold swing (SS), drain induced barrier lowering (DIBL) and leakage
current shows the considerable advantages as well as its thread-off in
implementing the structure, in particular for nanoscale regime.
Penulis: Munawar A. Riyadi,
Ismail Saad, Razali Ismail
Kode Jurnal: jptkomputerdd090042
