Research on Silicon-based Planar Spiral Inductance Coil Based on Microelectromechanical System
Abstract: This paper describes
a kind of silicon-based plane spiral inductance coil ,whose layout size and
fabrication technology process are given. The production of inductance coil
adopts the method of an internal down-lead produced by ohm contact electrode
which is formed by heavily boron- diffused and the Al evaporated on the surface
of N-type high resistivity silicon wafer. Processing the silicon cup on The
back of the silicon wafer using Microelectromechanical system (MEMS)
technology, on the basis of thickness reduction of the inductance coil
substrate, the porous array substrate of about 5μm thickness is obtained by
laser drilling on the underside of the silicon cup, which reduces the vortex of
substrate, and greatly improves the Q value of inductance coil. Analyze the
effects of series resistance of the coil and metal layer thickness on the Q value
in the condition of low frequency and high frequency, and Ansys software is
used to simulate the inductance coil current density and magnetic induction
intensity, to determine the optimum substrate thickness of inductance coil. The
silicon-based plane spiralind inductance coil has the advantages of simple
manufacturing process and is compatible with IC technology, compared with other
manufacturing method, so it has a wide application prospect.
Author: Gang Li, Xiaofeng
Zhao, Dianzhong Wen, Yang Yu
Jounal Code: jptkomputergg150132
