The Humidity Dependence of Pentacene Organic MetalOxide-Semiconductor Field-Effect Transistor
Abstract: Metal-oxide-semiconductor
field-effect transistors (MOSFET) were fabricated using organic semiconductor
pentacene. The humidity dependence of drain current gate voltage (ID-VG)
characteristic and drain current drain voltage characteristic (ID-VD) will be
explained. Firstly, the thermal oxidation method was used to grow SiO2 gate
insulator with thickness of 11 nm. Secondly, the thermal evaporation method was
used to form Au source and drain electrodes with thickness of 28 nm. The
channel width and length of the transistors were 500 mm and 200 mm,
respectively. By the same method, organic semiconductor material pentacene was
deposited with thickness of 50 nm at vacuum of 7.8x10-6 Torr. The hole mobilitydecreased
from 0.035 cm2/(Vs) to 0.006 cm2/(Vs), while the threshold voltage increased
from 0.5 V to2.5 V and gate leakage current also increased from 5.8x10-10 A to
3.3x10-9 A when the relative humidity increased from 20% to 70%.
Author: Fadliondi
Journal Code: jptkomputergg170142
